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Epitaxial Growth of III-V Semiconductors On Ion-Beam Enhanced Sapphire Surfaces

IP.com Disclosure Number: IPCOM000059521D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Clark, GJ Kirchner, PD Woodall, JM [+details]

Abstract

This article describes a technique for epitaxial (EPI) growth of group III-V semiconductors on ion-beam enhanced sapphire surfaces.