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This article describes a technique for epitaxial (EPI) growth of group III-V semiconductors on ion-beam enhanced sapphire surfaces.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
67% of the total text.
Page 1 of 1
Epitaxial Growth of III-V Semiconductors On Ion-Beam Enhanced Sapphire
This article describes a technique for epitaxial (EPI) growth of group III-V
semiconductors on ion-beam enhanced sapphire surfaces.
It is desirable to grow semiconductor EPI layers on refractory and insulating
single crystal substrates, e.g., gallium arsenide (GaAs) on sapphire. However,
the normal minimum-energy sapphire surface is terminated in 100% oxygen (O)
atoms at least for the c-axis. Practically, there is also foreign contamination.
Taken together, this inhibits uniform nucleation of planar EPI films of many
materials, especially GaAs.
It is known that molecular beam epitaxy (MBE) growth of most group III-V
compounds proceeds by the adatom absorption of column III elements on
column V-stabilized surfaces. This disclosure describes a procedure to alter the
surface structure of sapphire (Al2O3) so that aluminum (Al) atoms are exposed in
addition to O atoms. This allows direct chemical bonding between the Al atoms
on the sapphire surface and the group V elements, providing a column-V
stabilized surface for the growth of III-V semiconductors and their alloys.
The i- or c-axis sapphire surface is prepared by fine polishing and cleaning in
detergent and de-ionized water rinse. The sapphire is then heated in a flowing
helium (He) atmosphere at 1000oC for about 24 hours. The sapphire is then
sputtered with argon (Ar) ions, with the resulting ratio of surface Al to O atoms