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Strained Layer INAS Etch Stop

IP.com Disclosure Number: IPCOM000059527D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Heiblum, M [+details]

Abstract

During formation of the base and tunnel barrier in a tunneling hot electron transfer amplifier, a more reliable etch stop can be provided by depositing over the emitter a strained, lattice mismatched, layer having properties of different etching in RIE, ease of ohmic contact formation, and absence of a potential barrier in series with the emitter.