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CVD Of Aluminum from Gaseous Organometallics

IP.com Disclosure Number: IPCOM000059528D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Baseman, RJ Khandros, IY [+details]

Abstract

A novel process for improving the properties of thin metal films, thick metal films or local metallic features, particularly of aluminum, formed by CVD (laser assisted or otherwise) using common gaseous organometallic precursors involves the photolysis and pyrolysis of a mixture of gases. The process is also applicable to bulk metallurgical processes.