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Barrier Height Enhancement by Recoil Implantation Disclosure Number: IPCOM000059529D
Original Publication Date: 1988-Nov-01
Included in the Prior Art Database: 2005-Feb-16

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Hovel, HT Sadana, D [+details]


The Schottky barrier height can be increased and gate leakage decreased in MESFET devices by using recoil implantation through isoelectronic species layers to obtain greater densities of implanted materials in the target and thus modulate the target bandgap.