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A technique is described whereby the deposition of tungsten films is performed at significantly lower temperatures enabling the use of low temperature insulators in very large scale integrated circuits.
English (United States)
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Low Temperature Tungsten Film Deposition Process
A technique is described whereby the deposition of tungsten films is
performed at significantly lower temperatures enabling the use of low
temperature insulators in very large scale integrated circuits.
Typically, the deposition process of tungsten films, by means of chemical
vapor deposition (CVD), involves the use of tungsten hexafloride gas with a
hydrogen reduction process at temperatures in excess of 450oC, so as to be
able to maintain a reasonable deposition rate. However, when processing
wafers containing aluminum metallization, this high temperature is unacceptable.
Also, this process is not acceptable for future metallization in which interlayer
insulators may be a new material with a low dielectric constant, dictated by the
need for smaller resistor-capacitor (RC) time constants. An example of a via
hole structure on AlCu metal is shown in the figure, where the cross-section
structure involves via holes to be filled with CVD tungsten for a bipolar product.
Note the presence of aluminum conductors, which restricts high temperature
The concept described herein involves the addition of dichlorosilane to the
cold-wall reactor (in the presence of WF6) to permit fast growth of tungsten films
at much lower temperatures. For example, at 250oC, with the WF6 and SiH2Cl2
flow rates of 5 and 6 sccm, respectively, deposition rates of 1000 angstroms per
minute are obtained. The resulting film resistivity is...