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FET Structure With Improved Transconductance Disclosure Number: IPCOM000059583D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-16

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Joshi, RV Krusin-Elbaum, L Sai-Halasz, GA [+details]


Improvement in transconductance of a field effect transistor (FET) can be obtained through the use of spacerless conducting gate oxide having low resistivity and suitable work function in conjunction with tungsten deposited on the source and drain to lower sheet resistance.