Browse Prior Art Database

FET Structure With Improved Transconductance

IP.com Disclosure Number: IPCOM000059583D
Original Publication Date: 1988-Dec-01
Included in the Prior Art Database: 2005-Feb-16

Publishing Venue

IBM

Related People

Authors:
Joshi, RV Krusin-Elbaum, L Sai-Halasz, GA [+details]

Abstract

Improvement in transconductance of a field effect transistor (FET) can be obtained through the use of spacerless conducting gate oxide having low resistivity and suitable work function in conjunction with tungsten deposited on the source and drain to lower sheet resistance.