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Sense-Signal Enhancement in MTL Memory Cells

IP.com Disclosure Number: IPCOM000059639D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Wong, RC [+details]

Abstract

In MTL (merged-transistor logic) products, memory access may be accomplished by injector coupling with accompanying advantages and disadvantages. While the cell is small in area and operates at low power, the sense signal is very small and read access is very slow and difficult. This article describes a sensing scheme involving the use of a dynamic cross-coupled sense latch for MTL cells which provides for simpler and more flexible array organization and enhanced MTL memory cell bit line signals for reading. To enhance the sense signal, an MTL cell with split-bottom emitters (collectors of inversely-operated transistors), such as illustrated in Fig. 1, has been previously employed [*]. By means of the sensing rearrangement shown in Fig.