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Photoreactive Polyimide Etch-Back Process

IP.com Disclosure Number: IPCOM000059712D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Kent, JP Trumpp, H [+details]

Abstract

To provide a planar surface on a wafer or chip having polyimide-filled trenches, photoreactive polyimide disposed on the surface of the wafer is exposed at a shallow angle of 1 to 10 degrees. As indicated in Fig. 1, a trench 10 is formed in a semiconductor substrate 12 with photoreactive polyimide 14 deposited over substrate 12. A region 16 of polyimide 14 fills trench 10 and a region 18 of polyimide 14 forms a layer over the surface of substrate 12. Polyimide layer 18 is exposed with a grazing incidence light beam 20 having an angle of 1 to 10Πwith respect to the surface of substrate 12. This low angle of incidence minimizes the light penetration into the polyimide region 16 in trench 10.