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Modified in Situ Sputter Clean Process

IP.com Disclosure Number: IPCOM000059723D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Trumpp, HJ [+details]

Abstract

Different modifications of a sputter clean unit, such as having a calotte-shaped wafer dome without holes, using backers shielding the backside of the wafers from the plasma, and selecting a specific distance ratio of the dome backside and the wall to the dome frontside and the wall, permit using the sputter clean process also for metallizations in conjunction with lift-off photoresist structures having a high temperature sensitivity. In a modified arrangement, the plasma is separated into a "hard" and a "soft" plasma, the former, burning between the dome backside and the wall of the probe chamber, sputtering aluminum and reducing the water vapor partial pressure, and the latter, burning on the dome frontside, removing aluminum oxide surface layers.