Browse Prior Art Database

SENSE Amplifier for a Complementary Metal Oxide Silicon Read-Only Memory

IP.com Disclosure Number: IPCOM000059737D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Wissel, L [+details]

Abstract

This circuit performs the sense amplifier function for a complementary metal oxide silicon (CMOS) read-only memory (ROM). By means of a positive feedback, a small signal (just over 1 volt) on a bit line is amplified to about 5 volts. The circuit diagram depicts the sense amplifier, along with two representative bit lines with their restore and bit switch devices. Prior to an access, bit lines are precharged by the signal BLRES to a voltage [Vdd - Vtn]. The bit lines are left floating after access. If a personalized array device exists at the address accessed, it will conduct charge away from the bit line, reducing the bit line voltage.