Browse Prior Art Database

Dynamic Bipolar Random-Access Memory Design Immune to Upset by Alpha Particles

IP.com Disclosure Number: IPCOM000059741D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
O'Gorman, TJ [+details]

Abstract

To prevent soft errors due to alpha particle radiation, a dynamic bipolar random-access memory (RAM) array utilizing a twin cell design approach, where the storage nodes are physically separated, is featured. Each cell in the array has two storage nodes, as shown in the figure, i. e., N1 & N1', based on the two-device bipolar dynamic memory cell. The twin storage nodes are separated by at least 75 microns to prevent a single alpha particle from discharging both cells simultaneously. When data is written into a cell, two low charge storage nodes are a "0" bit and two high charge nodes are a "1" bit. When data is read from the cell, two low charge nodes are a "0" bit, but the sense amp would be designed to require only one of the high charge nodes to sense a "1" bit.