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Laser Induced Silicon Etching With Nano-second Pulsed Laser At/below Visible Wavelength

IP.com Disclosure Number: IPCOM000059843D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Chen, L Chuang, TJ Lankard, J [+details]

Abstract

Silicon is chemically etched with a nano-second pulsed laser at or below the visible wavelength. The laser is used at a low average power and an extremely high instantaneous peak intensity to provide a high etch rate, low bulk heating, increased efficiency, short absorption depth and no sublayer and surface dam Gases that work well in etching silicon are SF6, Cl2, CF4, CF4+O2 mixture and NF3 . Laser systems that are suitable for su applications include pulses Copper Vapor Lasers and pulsed Excimer Lasers in the ultraviolet and visible wavelength regions.