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Phonon-Mediated Quasiparticle Injection Transistor

IP.com Disclosure Number: IPCOM000059916D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Epperlein, PW [+details]

Abstract

Two superconducting tunnel junctions, separated by a thin dielectric layer for phonon transfer, form a three-terminal superconducting device which has good isolation characteristics. This article describes the use of superconducting tunnel junctions for generation and detection of recombination phonons with the energy of the superconducting gap 2W. Phonons are mediated between a niobium generator 1 and a Pb(In) detector 2 by a thin (Z 500 ˜) dielectric lead fluoride layer 3, showing a perfect phonon transmissivity at the generator/dielectric interface and a poor acoustical match at the detector/dielectric boundary. 1) The device has isolation, i.e., negligible effect of the output power on the input, which cannot be met by the QUITERON.