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Three-Terminal Tunnel-Junction Device Employing Energy-Gap Control in Superconducting Electrodes

IP.com Disclosure Number: IPCOM000059960D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Epperlein, PW [+details]

Abstract

Magnetically controlling the energy gap of a two-film, single-junction device permits the simple device to act as a three-terminal "superconducting transistor." The basic configuration is the known tunnel junction formed in the overlap region of two, crossed, superconducting striplines (Fig. 1). The configuration should be placed over a superconducting ground plane in the usual way as in the Josephson technology. The magnetic field Hcont will be produced by a current Icont flowing through one of the device's electrodes (width w), preferentially the base electrode. The maximum magnetic field will be given by Hcont = Icont/w.