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Self-Aligned Metallization for MBE Grown Bipolar Technology

IP.com Disclosure Number: IPCOM000059971D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Iyer, SS Stork, JM Tang, DD [+details]

Abstract

In order to fully exploit the performance capabilities of narrow base bipolar transistor, it is necessary to develop a high conductivity local interconnect scheme with small, low resistance contacts. A method is described herein by which this can be accomplished. Fig. 1 shows a bipolar structure fabricated having narrow base widths using Si grown by molecular beam epitaxy (MBE). A silicon dioxide masking layer was used to define windows for the extrinsic base areas which are used to contact the base. In forming the bipolar structure of Fig. 1 the silicon dioxide layer was etched off and a low temperature chemical vapor deposited (CVD) oxide layer deposited to be used in forming contacts to the emitter and base. Then, according to the technique of this publication, the masking CVD oxide layer is etched off.