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High-Sensitivity Magnetosensitive Microdevice

IP.com Disclosure Number: IPCOM000060014D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Greschner, J Schmid, G [+details]

Abstract

The magnetosensitive microdevice is realized as an integrated solidstate sensor. In addition to being utilized for sensing, the semiconductor material of the sensor, say, silicon, serves to provide electronic functions, such as signal amplification, multiplexing, digitalization, immediately adjacent to the sensor. Fig. 4 is a sectional view of the device. The sensor comprises a P+N-N+ diode 3, 2',4 realized as an about 1 to 2 mm thick self-supporting membrane 2. Magnetic induction B, provided in the plane of membrane 2 at the front side of the sensor vertically to a current I, reaching the diode through wiring 7, 8 and contacts, connected to a voltage V, causes injected electrons and holes to be deflected in diode N- zone 2'.