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Suspended Fine Metal Conductors

IP.com Disclosure Number: IPCOM000060049D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Knoedler, CM [+details]

Abstract

Suspended fine metal conductors, useful in noise studies and quantum size effects, may be fabricated as a film on a sandwich substrate, a portion of which can be removed from under the film. As a specific example, a molybdenum film grown on a GaAs/AlxGal-x As/GaAs sandwich substrate is used as an illustration. A GaAs semi-insulating, substrate oriented (100) has a buffer layer of undoped GaAs grown that is about 300 nm-500 nm thick by molecular beam epitaxy (MBE) techniques or metal organic chemical vapor deposition (MOCVD). Then, in the same growth run, an AlxGal-xAs layer with .2_x_.4 about 50 nm thick is grown on top of the buffer layer and finally an undoped GaAs layer about 300 nm or greater is grown.