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LOW-TEMPERATURE DEPOSITION OF SiO2, Si3N4 OR SiO2-Si3N4

IP.com Disclosure Number: IPCOM000060060D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Marinace, JC [+details]

Abstract

The deposition of films of the title materials can be effected at low or room temperature by plasma-activated reactions at reduced pressure in the apparatus shown in the figure. For SiO2 films: Source material is (C2H5O)4Si at 0ŒC, T2 . T1 Z room temperature. T3 = -196ŒC provided by liquid N2 . SiO2 film growth rate Z 120 ˜ per minute. For Si3N4 films: Source material is (CH3)3Si NH Si(CH3)3, (HMDS), at -29.79ŒC, T2, provided by FREON 12*. T1 Z room temperature. T3 = -196ŒC provided by liquid N2 . Si3N4 growth rate Z 120 ˜ per minute. For SiO2-Si3N4 films: Perform the above two reactions simultaneously. * Trademark of E. I. du Pont de Nemours & Co.