Method for Gettering an Oxide Film On the Surface of a Polysilicon Layer
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08
This article discloses a method of forming a polycide gate structure whereby a thin layer of titanium or titanium disilicide is deposited on the surface of a polysilicon layer just prior to the deposition of a silicide layer. The method eliminates the thin, native oxide layer present on the surface of the polysilicon layer, thereby improving adhesion of the silicide layer.