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Method for Gettering an Oxide Film On the Surface of a Polysilicon Layer

IP.com Disclosure Number: IPCOM000060101D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Hallock, DP Ishaq, MH Kristoff, MS Polavarapu, MS Ryan, J Stanasolovich, D [+details]

Abstract

This article discloses a method of forming a polycide gate structure whereby a thin layer of titanium or titanium disilicide is deposited on the surface of a polysilicon layer just prior to the deposition of a silicide layer. The method eliminates the thin, native oxide layer present on the surface of the polysilicon layer, thereby improving adhesion of the silicide layer.