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Rapid Thermal Annealing of Highly Doped Semiconductor Material to Improve Sensitivity of Sheet Resistance Measurement

IP.com Disclosure Number: IPCOM000060119D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Altieri, J Holmstrom, F Keenan, WA Liu, CY Tarn, CT [+details]

Abstract

The sheet resistance measurement of semiconductor material which has been highly doped by ion implantation can be improved by subjecting the semiconductor material to a rapid thermal annealing (RTA) step. For example, in silicon semiconductor wafe with ion implanted boron, the boron atoms must be in substitutional sites in the silicon wafers in order to contribute to conduction. The amount of boron that is in substitutional sites, which is a function of the annealing temperature, affects the hole conductivity and thus the sheet resistance measurement value. For high dose boron implant, the boron concentration is too high for the boron atoms to be put into substitutional sites with conventional furnace annealing at lower temperatures.