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An etching process is described in which chromium is selectively etched by a solution containing Thiourea, sulfuric acid and water (TSW).
English (United States)
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Process for Etching Chromium
An etching process is described in which chromium is selectively etched by a
solution containing Thiourea, sulfuric acid and water (TSW).
The process for selectively etching a chromium film includes the steps of
electrically connecting a bar of zinc to the chromium film and immersing the zinc
bar and chromium film simultaneously into the TSW. Due to the higher chemical
potential of zinc when compared to chromium, the chromium oxide on the face of
the film is reduced to chromium which is then attacked by the sulfuric acid.
With a solution containing 3.5% Thiourea, 3.5% sulfuric acid and 93% water
which is heated to about 55OEC, the TSW etches a chromium film in a time frame
of 10 to 15 seconds without damage to other parts of the structure such as NiFe,