Polyimide Primer Coatings for Void-Free Polyimide Passivation Films
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08
Surface modification of semiconductor devices, for the primary purpose of reducing or eliminating second level metal opens due to voids at the polyimide insulator layer silicon nitride interface of a dual dielectric passivated surface, is described in this article. As device geometries become smaller and topographically more severe, structures having deep trenches or window features become more difficult to passivate. Unfilled areas (voids) caused by the failure of the polyimide to fill or wet into the trench and window features of the structure will impact yield and reliability if lithographic images in the polyimide and second metal intercept one of these void areas.