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Self-Aligning Method for Depositing Material on Conductive Surfaces

IP.com Disclosure Number: IPCOM000060146D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Elsner, G Hinkel, H Kempf, J [+details]

Abstract

Surfaces with conductive and insulating regions are bombarded with ions having an energy of less than 100 eV and consisting of, say, a metallic material, and simultaneously with ions of that material or helium having an energy of several hundred eV, say, 400 to 1000 eV. The material is deposited only on the conductive regions. This method is based on the observation that ions impinging with an energy of less than 100 eV adhere well to conductive surfaces but poorly to insulating surfaces, and that ions having an energy of the order of several hundred eV do not grow on conductive or insulating surfaces.