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Use of Rapid Thermal Annealing in the Production of Double Diffused Lateral PNP Transistors

IP.com Disclosure Number: IPCOM000060390D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Altieri, J Holmstrom, F Keenan, WA Liu, CY Tarn, CT [+details]

Abstract

A process for the fabrication of a double diffused lateral PNP structure is disclosed in U.S. Patent 4,180,827. The use of rapid thermal annealing (RTA) to activate ion-implanted boron is described in U.S. Patent 4,482,393. The process can be improved by using boron implantation to dope the PNP emitter and then RTA to activate the implanted boron. In this improved process, the RTA step, which includes exposure of the semiconductor material to noncoherent light to heat the material to approximately l150ŒC for between 30 and 60 seconds, activates the ion-implanted boron in the emitter and causes most of the boron atoms to be put into substitutional sites.