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Bipolar Integrated Circuit Structure for Fast Signal Detection and Amplification

IP.com Disclosure Number: IPCOM000060431D
Original Publication Date: 1986-Apr-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Pricer, WD [+details]

Abstract

A dual bipolar emitter structure is described which, when combined with field-effect transistors, offers fast signal detection, amplification and input/output circuit capacitance isolation. A conventional bipolar cross-coupled pair when modified (Fig. 1) with the addition of two structural emitters 11 and 12 (which act as collectors) and with the inclusion of other field-effect transistors 15 and 16, eliminate two circuit limitations presented by the simple bipolar cross-coupled pair. They are: 1) Limited amplification of about 0.7 volt by the two-base collector diodes. 2) Lack of isolation between the internal latching nodes 13 and 14 from the capacitive load of the Data In 19 and 20 or Data Out 21 and 22 loads. The modified bipolar cross-coupled pair is capable of generating greater than a 0.