Preventing the Channelling Effect During Ion Implantation by Simultaneous Atom and Cluster Ion Bombardment
Original Publication Date: 1986-Apr-01
Included in the Prior Art Database: 2005-Mar-08
An improved ion implantation process is proposed which suppresses the channelling effect by simultaneous atom and cluster ion bombardment. The doping profile is generated as usual by means of the atom ions, while the cluster ions are used to generate a very thin (1 - 5 nm) quasi-amorphous layer on the crystal surface which prevents the channelling effect. During the application of the process, the cluster beam is generated in a special ion source. Each single cluster consists of several hundred up to several hundred thousand atoms and carries only a single elementary charge. The clusters are accelerated to a normal energy value (10 keV - 50 keV). As a cluster impinges on a solid surface, it decomposes, and its energy divides into single atoms.