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Magnetic Field Enhanced Hydrogen Reactive Ion Etching of Metals

IP.com Disclosure Number: IPCOM000060617D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08

Publishing Venue

IBM

Related People

Authors:
Hiraoka, H Krounbi, MT Lee, J [+details]

Abstract

Enhanced etch rates of hydrogen RIE of metals with a magnetic field applied have the advantages of no redeposition and no edge deterioration which usually accompany with argon ion sputtering. Besides, H2-RIE can operate at a higher pressure. Hydrogen should be mixed with helium in practical operations.