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Contact Sites Self-aligned On Mos Gate Edges

IP.com Disclosure Number: IPCOM000060634D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Chin, D Ning, T [+details]

Abstract

Self-aligned contacts can be formed on MOS gate edges by localized doping of polysilicon and preferential etching. The us these self-aligned contacts prevents possible short circuits between the metal layer and polysilicon gates.