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A Simple Symmetrical Transistor Using Selective Epitaxy

IP.com Disclosure Number: IPCOM000060636D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Arienzo, M Ginsberg, BJ Tang, DD [+details]

Abstract

Symmetrical bipolar-transistors can be fabricated by using selective epitaxy and relying on the faster oxidation rate of p+ polysilicon to self-align the emitter region.