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Overscanning Fo Accurate Doping Level Change in Si Mbe

IP.com Disclosure Number: IPCOM000060638D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Iyer, SS [+details]

Abstract

This publication describes a technique for the accurate control of doping level changes in Si MBE. Silicon Molecular Beam Epitaxy is a technique of growing silicon and related materials with simultaneous incorporation of intentional impurities such as dopants with extreme control. Originally, the dopant was incorporated through the use of thermally generated dopants and th scheme was found to have several difficulties. Low energy ion beams have been proposed as a technique to incorporate the dopant just below the growing surface. Such schemes are now commercially available. They consist of an ion source which is a cell the thermal generation of dopants. The dopants are then ionized in a plasma chamber, extracted at high voltage, mass selected, decelerated and then deflected into the growth chamber.