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Small Device Capacitance Measurement Using a Scanning Electron Microscope

IP.com Disclosure Number: IPCOM000060666D
Original Publication Date: 1986-Apr-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Delecki, JJ [+details]

Abstract

To measure capacitance of devices inaccessible by physical probe connections, e.g. a cell node, features available in a standard electron microscope are utilized. Primary beam electrons are used to charge a cell node. Calibrated energy analysis of secondary electrons allows determination of voltage (V) built up on the cell node as a function of time (t). Substrate current (Isub = current through the cell node to the substrate) is measured. The capacitance C = Isub/(dV/dt) of the cell node is thus determined.