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This article describes a technique which may be used to compensate for image size and/or photo and etch bias.
English (United States)
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Epitaxial Compensation of Trench Etch Bias
This article describes a technique which may be used to compensate for
image size and/or photo and etch bias.
During the reactive ion etch (RIE) of a trench in silicon, usually some degree
of etch bias occurs. Trench etch bias becomes an important dimensional
consideration as horizontal dimensions decrease and obtaining zero bias in deep
trenchs becomes increasingly difficult to achieve. An epitaxial (single crystal) l on
the trench sidewalls can eliminate or even reverse this trend.
The Figure shows a trench cross-section with the initial lithographic image
size 10 and the actual trench image size due to etch bias 11. An epitaxial silicon
deposition on the trench side walls 12 will compensate for trench etch bias and
restore the trench to the initial lithographic image size 10.