Spectroscopic Determination of Wafer Thickness for Measurement of Interstitial Oxygen by Dispersive Infra-red Spectroscopy
Original Publication Date: 1986-Apr-01
Included in the Prior Art Database: 2005-Mar-09
In the manufacture of semiconductor devices interstitial O2 concentration must be measured during silicon crystal and w development since it affects yields. An invention proposes a method whereby the number of fringes in the absorbance spectrum of an infra-red spectrometer may be used to determine wafer thickness, a necessary step in determining O2 concentration.