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Spectroscopic Determination of Wafer Thickness for Measurement of Interstitial Oxygen by Dispersive Infra-red Spectroscopy Disclosure Number: IPCOM000060686D
Original Publication Date: 1986-Apr-01
Included in the Prior Art Database: 2005-Mar-09

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Harwood, PB Kulkarni, MV [+details]


In the manufacture of semiconductor devices interstitial O2 concentration must be measured during silicon crystal and w development since it affects yields. An invention proposes a method whereby the number of fringes in the absorbance spectrum of an infra-red spectrometer may be used to determine wafer thickness, a necessary step in determining O2 concentration.