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Inert Ion-Implanted Schottky Barrier Diode Compatible With Hot Processing Disclosure Number: IPCOM000060952D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09

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Bergeron, DL [+details]


An argon ion implantation is used to form Schottky barrier diodes (SBDs) which have desirable characteristics after having been exposed to hot processing, e.g., 925 degrees Celsius in an oxidizing environment. The process described in "Inert Ion-Implanted Schottky Barrier Diode" by D. L. Bergeron in the IBM Technical Disclosure Bulletin 25, 1805 (September 1982) could not be used in processes where high temperature thermal oxidation is used after the device formation. The process described here is performed prior to thermal oxide processing and has been demonstrated to be tolerant of a 925 degrees Celsius oxidation step.