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Stabilized Barrier Schottky Diode

IP.com Disclosure Number: IPCOM000060974D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Wagner, LF [+details]

Abstract

A technique is disclosed for improving stability of Schottky barrier diodes (SBDs) by reducing the sensitivity of the barrier height to the electric field through the introduction of impurities near the rectifying interface. The impurities are chosen because of their having acceptor states at the optimum energy. Their effect is to make the ideality factor closer to the ideal state of 1 and reduce reverse bias leakage. The method applies to titanium-tungsten or platinum-silicon diodes on n-type silicon. However an analogous approach may be effected for other anodes, semiconductors, or p-type semiconductors.