Browse Prior Art Database

High-Speed, Double-Dense SRAM and EEPROM Cell

IP.com Disclosure Number: IPCOM000060979D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Kauffmann, BA Lam, CH Tong, MH Walsh, SJ [+details]

Abstract

This circuit provides a double-dense, high-speed static and non-volatile memory cell for maintaining data even during power loss.