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Improved Lateral PNP With Polysilicon Contacts

IP.com Disclosure Number: IPCOM000060981D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Fitzpatrick, DA Malaviya, SD Martin, B [+details]

Abstract

A method has been proposed to improve the lateral PNP (LPNP) in semiconductor devices by forming small PNP emitters by image transfer from a sidewall. The narrow width of the smaller emitter and self-aligned contact reduces series emitter resistance. Beta characteristics also are significantly improved. The invention calls for changes in a conventional bipolar manufacturing process following a 450 L/square resistor implant step as follows: a. Blanket LPCVD (low pressure chemical vapor deposition) nitride 800ŒC, 100 nm thick. b. Photoresist (PR), 2 m thick, patterned with LPNP mask #1. Plasma harden the resist. c. Blanket plasma oxide, 0.6 m thick, 245ŒC. d. Blanket RIE (reactive ion etch) plasma oxide, 0.6 m, end point detect on the underlying nitride layer and overetch slightly.