Bipolar Impulse Circuit
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09
This article describes a bipolar circuit which, while offering many of the desirable performance features of a CMOS (complementary metal oxide semiconductor) circuit, can be fabricated in a standard bipolar device process. The disclosed circuit offers bipolar compatibility together with low power dissipation and will operate over a very wide range of voltages with non-critical tolerances. In Fig. 1, the bipolar impulse circuit is shown configured as a two-input NAND function and in Fig. 2 as a two-input NOR. High input impedance is achieved in each example by the use of high value resistors R1, R2, R3, and R4 to limit the input current, thereby preventing "current hogging" of the driving stage, while also increasing the DC input impedance.