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Heterojunction FET

IP.com Disclosure Number: IPCOM000061110D
Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Harder, C [+details]

Abstract

A heterojunction field-effect transistor (HJFET) is proposed having an n GaAs channel and a p+In(x)Ga(1-x)As gate, causing the bandgap of the heavily doped gate to be narrower than the bandgap of the channel. Compared with an ordinary junction FET, the disclosed HJFET has a large gate turn-on voltage, permitting higher voltage swing operations. Also, its gate can be used as a voltage clamp since the injection of minority carriers is reduced. A cross-section of the transistor is shown in the figure.""The n GaAs channel is formed on an i GaAs substrate.