Original Publication Date: 1986-Jun-01
Included in the Prior Art Database: 2005-Mar-09
A heterojunction field-effect transistor (HJFET) is proposed having an n GaAs channel and a p+In(x)Ga(1-x)As gate, causing the bandgap of the heavily doped gate to be narrower than the bandgap of the channel. Compared with an ordinary junction FET, the disclosed HJFET has a large gate turn-on voltage, permitting higher voltage swing operations. Also, its gate can be used as a voltage clamp since the injection of minority carriers is reduced. A cross-section of the transistor is shown in the figure.""The n GaAs channel is formed on an i GaAs substrate.