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Method for Forming Interlevel Insulated Layers for Improved In- Tralevel Insulation And Elimination of Extrusion Fails

IP.com Disclosure Number: IPCOM000061141D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Dalal, HM Nguyen, DB Rathore, HS [+details]

Abstract

In the development of semiconductor there is the possibility that intralevel shorts can develop due to metal extrusion into insulator between adjacent metal lines on the same metal level. plasma nitride used on an underlying metal pattern reduces the likelihood of some shorts. It also reduces interlevel shorts due to the presence of this plasma nitride layer between two metal levels.