A Controlled Isotropic Reactive Ion Etch Process for Sloped Nitride Sidewalls
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09
A method has been developed for etching sloped nitride sidewalls in semiconductors with minimum etch bias loss. The method makes it possible to eliminate a process step, ribbon etch, through controlled isotropic etching in a diode chamber.