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A Controlled Isotropic Reactive Ion Etch Process for Sloped Nitride Sidewalls

IP.com Disclosure Number: IPCOM000061142D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Marinaccio, FA McKnight, MJ Murphy, JM [+details]

Abstract

A method has been developed for etching sloped nitride sidewalls in semiconductors with minimum etch bias loss. The method makes it possible to eliminate a process step, ribbon etch, through controlled isotropic etching in a diode chamber.