Browse Prior Art Database

Technique for Reliably Making a Non-rectifying Ohmic Contact to Silicon With a Probe

IP.com Disclosure Number: IPCOM000061165D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Bobroff, N DiMilia, V Paraszczak, JR [+details]

Abstract

A temporary non-rectifying ohmic contact to silicon may be made with a probe by momentarily applying a suitably high A.C. or D.C. voltage across the contact. It is well known that silicon surfaces tend to rapidly oxidize in air so that a silicon surface quickly becomes covered with an oxide layer (SiO2). When a probe is brought into contact with a silicon surface, the resulting contact is not ohmic if a silicon dioxide layer separates the probe from the silicon material. Special cleaning procedures or etching may be used to remove the oxide layer. Alternatively, the surface may be scratched (to locally remove some of the SiO2) or metal diffusion can be used.