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Method to Increase Throughput Rate of In-line Plasma Processes

IP.com Disclosure Number: IPCOM000061171D
Original Publication Date: 1986-May-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Hoffarth, G Knoll, AR Mlynko, WE Rembetski, JF [+details]

Abstract

Under low loading conditions a plasma etch rate is increased by decreasing the applied RF power until a certain minimum value is reached. Under higher loading conditions (e.g. those found in current plasma hole cleaning operations) this result is not as pronounced. Thus an in-line etch process in which a significantly smaller area than the full board surface is exposed to the plasma at any time is conducted at substantially lower power than utilized in current operations. Low power in-line processing results in a sho process time and higher throughput rate of printed circuit boards as a result of the increased etch rates achievable.