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Bipolar Transistor Structure Disclosure Number: IPCOM000061293D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09

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Iyer, SS Stork, JM Tang, DD [+details]


This article relates generally to integrated circuit fabrication and, more particularly, to a method of using molecular beam epitaxy to form a transistor with a shallow base. Transistor base thickness can be made thinner by using molecular beam epitaxy and, when combined with a "salicide" process, will reduce extrinsic base resistance, resulting in a faster transistor. In Fig. 1, recessed oxide 1 is grown on n-type substrate 2 that is then subjected to molecular beam epitaxy to form a p-type layer 3 and n+-type layer 4. The latter layer is thicker than the diffusion length of holes in that layer and the subsequent heat cycle is reduced as much as possible while growing a thin thermal oxide, possibly in high pressure steam, or by plasma enhanced growth.