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Deposition of Silicon Nitride Disclosure Number: IPCOM000061302D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09

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Mendez, EE Tiwari, S Wang, WI [+details]


The damage in semiconductor structures caused by high energy processes for the deposition of silicon nitride (Si3N4) is avoided by the use of ultraviolet light in a photochemical deposition operation involving SiH4 and NH3 in which no high energy ions are produced and, in turn, subsequent annealing to overcome high energy ion damage is not required.