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Wafer Level Hybridization of Infrared Diodes for Diffuse Data Transmission

IP.com Disclosure Number: IPCOM000061329D
Original Publication Date: 1986-Jul-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Munoz-Bustamante, C Zalph, WN [+details]

Abstract

A technique is described whereby infrared diodes are hybridized at the wafer level to enhance the diffuse data transmission throughput and distance capabilities of infrared diodes. An integral photon reflector is fabricated so as to form a well to increase the photon efficiency of the diode. In prior art, optical simulation proved that without a pointable device to direct transmitted energy, one watt of energy must be transmitted in each of eight symmetrical directions to achieve a 10 x 10 meter range with a bit error rate of 10-9 . This required twenty-four diodes to accomplish the transmission. Also, for each one degree centigrade temperature rise during transmission, there is a one percent loss of transmitted optical energy.