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Reflective Random-Access Memory

IP.com Disclosure Number: IPCOM000061531D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Quinn, TP White, HP [+details]

Abstract

The RRAM (reflective random-access memory) is a multi-ported memory that may be read or written to concurrently by all the processors connected to it. The RRAM consists of a plurality of random-access memories (RAMs) arranged in plains with each RAM or plain tied to a different processor via standard address, data, and control logic lines so that the state of one memory cell in a given plain is reflected to all the cells in the corresponding position in all the other plains. The reflective action between plains of the RRAM is performed through the parallel voltage-controlled gate structure shown in Fig. 2. The voltage controlling the gate of Q1 (Fig. 1) is instantaneously applied to the gate of Q1', Q1'', Q1'''. This identical effect controls all the Q2 FETs.