Integrated Circuit Conductor Line Self-Aligned to Contact Opening
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09
A technique is shown for producing self-alignment between a conductor line and a contact opening. This eliminates conductor level to contact hole level mask alignment tolerances. Fig. 1 shows a conductor line 10 and a contact 11 fabricated on a minimum definable lithographic pitch utilizing a masking technique which results in a self-aligned conductor line and contact opening. Fig. 2 shows the cross-section "A-A" of Fig. 1. A resist mask 12 is provided on the upper portion of insulating layer 13. A shallow line trench 14 is reactively ion etched (RIE) into insulator 13 through the mask 12 to form the path at conductor line 10. Fig. 3 shows the cross-section "B-B" of Fig. 1. A contact resist mask 15 is applied on top of the conductor line resist mask 12.