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On-Chip Electrically Programmable Fuse Disclosure Number: IPCOM000061566D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

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Craig, WJ Parent, RM [+details]


This article describes a high resistance on-chip programmable polysilicon fuse segment fabricated into a low sheet resistance silicide line which is used to interconnect semiconductor circuits. To blow fuses, on-chip electrical programming circuits are designed which produce high local heating by passing current through a highly resistive fuse link. Major circuit design criteria are the resistor value, the applied voltage pulses, device current and transistor size. The optimum design point is a high resistance fuse element which requires the minimum amount of current and smallest transistor size. Fig. 1 shows a vertical cross-section of a semiconductor structure with a layer of polysilicon on top which will form the basis for a silicide line to be selectively modified with a high resistance segment and form a fuse in the line.