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Photomask Repair Process for Opaque Chrome Defects

IP.com Disclosure Number: IPCOM000061598D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Sargent, RJ [+details]

Abstract

A high resolution, low defect repair technique for multilevel chromium semiconductor photomasks is presented. Fig. 1 shows a chromium mask 10 on a glass substrate 11 with an opaque defect 12 in the chrome layer 13. As shown in Fig. 2, a thin organic film 14 is deposited on top of the chrome layer 13. An inorganic film 15 is then deposited, such as a chemical deposited oxide, followed by an overcoat of photoresist 16. Fig. 3 shows the photoresist layer 16 after being exposed and developed to create an opening 17 in the area of the opaque defect 12. This is done by exposing the photoresist to light from a source disposed below glass substrate 11. Fig. 4 shows the inorganic film 15 after reactive ion etched (RIE) through the photomask opening 17 to form an opening 18.